M. Muske - Concepedia

Author

M. Muske

Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute

Also Known As

Eisert, S., M Muske, M. Muske, Martin Muske, Muske, M.

Publications

690

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute Helmholtz-Zentrum Berlin für Materialien und Energie Fritz Haber Institute of the Max Planck Society Forschungszentrum Jülich V.E. Lashkaryov Institute of Semiconductor Physics

About

M. Muske is an author at Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute specializing in materials science, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	16	633
2	Applied Physics	12	13	572
3	Chemical Engineering	3	3	84
4	Chemistry	1	1	38
5	Electrical Engineering	1	1	49

M. Muske

Publications

657

Citations

H-Index

Page 1

	Year	Citations
Aluminum-induced crystallization of amorphous silicon S. Gall, M. Muske, I. Sieber, Journal of Non-Crystalline Solids Materials EngineeringMaterials ScienceAluminum-induced CrystallizationEngineeringApplied Physics	2002	113
Large-grained polycrystalline silicon on glass for thin-film solar cells S. Gall, Jens Schneider, J. Klein, Thin Solid Films Materials ScienceEngineeringApplied PhysicsLarge-grained Polycrystalline SiliconSilicon On Insulator	2006	78
A kinetic simulation study of the mechanisms of aluminum induced layer exchange process Andrey Sarikov, Jens Schneider, J. Berghold, Journal of Applied Physics Aluminium NitrideLayer Exchange ProcessKinetic Simulation StudyEngineeringMechanical Engineering	2010	63
A simple model explaining the preferential (100) orientation of silicon thin films made by aluminum-induced layer exchange Jens Schneider, Andrey Sarikov, J. Klein, Journal of Crystal Growth Materials ScienceEngineeringPhysicsSimple ModelSilicon On Insulator	2006	49
Potential of interdigitated back-contact silicon heterojunction solar cells for liquid phase crystallized silicon on glass with efficiency above 14% Cham Thi Trinh, Natalie Preissler, Paul Sonntag, Solar Energy Materials and Solar Cells Materials ScienceElectrical EngineeringEngineeringOrganic Solar CellLiquid Phase	2017	49
Aluminum-induced crystallization of amorphous silicon: preparation effect on growth kinetics Jens Schneider, J. Klein, M. Muske, Journal of Non-Crystalline Solids Materials ScienceAluminum-induced CrystallizationEngineeringCrystal Growth TechnologyApplied Physics	2004	42
Temperature stability of ZnO:Al film properties for poly-Si thin-film devices K. Y. Lee, Christiane Becker, M. Muske, Applied Physics Letters Aluminium NitrideEngineeringThin Film Process TechnologyPhotovoltaicsSemiconductors	2007	40
Aluminum-induced crystallization: Nucleation and growth process Jens Schneider, Andreas G. F. Schneider, Andrey Sarikov, Journal of Non-Crystalline Solids Materials ScienceMaterials EngineeringAluminum-induced CrystallizationEngineeringCrystal Growth Technology	2006	38
Low-temperature Si epitaxy on large-grained polycrystalline seed layers by electron–cyclotron resonance chemical vapor deposition B. Rau, I. Sieber, Jens Schneider, Journal of Crystal Growth Materials ScienceLow-temperature Si EpitaxyEngineeringApplied PhysicsSemiconductor Device Fabrication	2004	36
Aluminium-induced crystallisation of amorphous silicon: influence of the aluminium layer on the process J. Klein, Jens Schneider, M. Muske, Thin Solid Films Materials EngineeringMaterials ScienceAluminium NitrideEngineeringApplied Physics	2004	31

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