P. Spinelli

Nickel vs. cobalt silicide integration for sub-50nm CMOS

B. Froment, Markus Müller, H. Brut et al. · 2004 · 17 citations

Materials Science, Materials Engineering, Electrical Engineering +12

High energy ion implantation for C-MOS isolation n-wells technology: Problems related to the use of multicharged phosphorous ions in an industrial context

P. Spinelli, J. Escaron, A. Soubie et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 16 citations

Materials Science, Electrical Engineering, Ion Implantation +8

Integration of a 3 level Cu-SiO/sub 2/ air gap interconnect for sub 0.1 micron CMOS technologies

V. Arnal, J. Torrès, Philippe Gayet et al. · 2001 · 15 citations

Engineering, Device Integration, Silicon On Insulator +17

Formation of shallow P+N junctions by dual implantation

B. Biasse, Alain Cartier, P. Spinelli et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1987 · 15 citations

Engineering, Nanoelectronics, Applied Physics +4

Critical aspects of high energy implants for CMOS technology: Channeling effects and masking problems

P. Spinelli, Alain Cartier, M. Bruel · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1987 · 13 citations

Low-power Electronics, Electrical Engineering, Engineering +9