B. Biasse

Statistics

Publications

Citations

376

H-Index

Active since

1987

Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives(Current)

CEA Grenoble

Direction de la Recherche Technologique

Soitec (France)

Centre National de la Recherche Scientifique

B. Biasse is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in semiconductor devices, engineering, and materials science.

Publications per year

1987–2007

Publications

Bonded planar double-metal-gate NMOS transistors down to 10 nm

M. Vinet, T. Poiroux, J. Widiez et al. · IEEE Electron Device Letters · 2005 · 129 citations

Engineering, Electrical Engineering, Materials Science +17

The generic nature of the Smart-Cut® process for thin film transfer

B. Aspar, H. Moriceau, E. Jalaguier et al. · Journal of Electronic Materials · 2001 · 109 citations

Natural Sciences, Materials Engineering, Materials Science +12

High-frequency surface acoustic waves excited on thin-oriented LiNbO/sub 3/ single-crystal layers transferred onto silicon

T. Pastureaud, M. Solal, B. Biasse et al. · IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control · 2007 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +17

Low-temperature Pyrex glass wafer direct bonding

Florent Pigeon, B. Biasse, Marc Zussy · Electronics Letters · 1995 · 25 citations

Engineering, Materials Engineering, Materials Science +11

Oriented lithium niobate layers transferred on 4" [100] silicon wafer for RF SAW devices

M. Solal, T. Pastureaud, S. Ballandras et al. · 2003 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

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