B. Biasse

Bonded planar double-metal-gate NMOS transistors down to 10 nm

M. Vinet, T. Poiroux, J. Widiez et al. · IEEE Electron Device Letters · 2005 · 128 citations

Alignment Marks, Electrical Engineering, Engineering +7

The generic nature of the Smart-Cut® process for thin film transfer

B. Aspar, H. Moriceau, E. Jalaguier et al. · Journal of Electronic Materials · 2001 · 108 citations

Materials Science, Engineering, Smart-cut® Process +8

High-frequency surface acoustic waves excited on thin-oriented LiNbO/sub 3/ single-crystal layers transferred onto silicon

T. Pastureaud, M. Solal, B. Biasse et al. · IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control · 2007 · 40 citations

Low-temperature Pyrex glass wafer direct bonding

Florent Pigeon, B. Biasse, Marc Zussy · Electronics Letters · 1995 · 25 citations

Materials Science, Materials Engineering, Glass-ceramic +13

Oriented lithium niobate layers transferred on 4" [100] silicon wafer for RF SAW devices

M. Solal, T. Pastureaud, S. Ballandras et al. · 2003 · 25 citations

Engineering, Rf Saw Devices, Silicon On Insulator +17