R. D. Yingling

High-efficiency GaAlAs/GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition

Russell D. Dupuis, P.D. Dapkus, R. D. Yingling et al. · Applied Physics Letters · 1977 · 80 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Materials +19

Electrical properties of polycrystalline GaAs films

J. J. Yang, P.D. Dapkus, Russell D. Dupuis et al. · Journal of Applied Physics · 1980 · 47 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +16

The effect of a Ga prelayer on the beginning of GaAs epitaxy on Si

R. D. Bringans, Marjorie A. Olmstead, F. A. Ponce et al. · Journal of Applied Physics · 1988 · 29 citations

Materials Science, Electrical Engineering, Epitaxial Growth +12

Ultraviolet–ozone cleaning of silicon surfaces studied by Auger spectroscopy

B. S. Krusor, D. K. Biegelsen, R. D. Yingling et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 29 citations

Materials Science, Auger Spectroscopy, Surface Characterization +14

Graded-thickness samples for molecular beam epitaxial growth studies of GaAs/Si heteroepitaxy

D. K. Biegelsen, F. A. Ponce, B. S. Krusor et al. · Applied Physics Letters · 1988 · 28 citations

Materials Engineering, Materials Science, Gaas/si Heteroepitaxy +14