Applied Physics Letters · 1977 · 80 citations · 8 references
Wide-bandgap SemiconductorEngineeringSemiconductor MaterialsPhotovoltaic DevicesPhotovoltaicsSemiconductor DeviceSemiconductorsIi-vi SemiconductorSolar Cell StructuresMolecular Beam EpitaxyCompound SemiconductorMaterials ScienceSemiconductor TechnologyElectrical EngineeringSolar PowerZn WindowContact AreaApplied PhysicsSolar CellsOptoelectronicsMo-cvd ProcessSolar Cell Materials
High-efficiency GaAlAs/GaAs heterostructure solar cells have been grown by metalorganic chemical vapor deposition (MO−CVD). Simulated air-mass-zero (AM0) short-circuit current densities of 24.5 mA/cm2, open-circuit voltages of 0.99 V, fill factors of 0.74, and efficiencies of 12.8% have been measured on devices without AR coatings (uncorrected for contact area). These cell structures employ a thin (∼520Å) GaAlAs : Zn window and a GaAs : Zn/GaAs : Se p-n junction grown entirely by the MO-CVD process.
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SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES
H. M. Manasevit · Applied Physics Letters · 1968 · 422 citations