N. Rovedo

High performance CMOS fabricated on hybrid substrate with different crystal orientations

Min Yang, M. Ieong, L. Shi et al. · 2004 · 90 citations

Engineering, Electrical Engineering, Microelectronics +14

The effects of fluorine on parametrics and reliability in a 0.18-μm 3.5/6.8 nm dual gate oxide CMOS technology

Terence B. Hook, E.L. Adler, F Guarin et al. · IEEE Transactions on Electron Devices · 2001 · 79 citations

Engineering, Electrical Engineering, Materials Science +17

High speed 45nm gate length CMOSFETs integrated into a 90nm bulk technology incorporating strain engineering

V. Chan, R. Rengarajan, N. Rovedo et al. · 2004 · 76 citations

Engineering, Electrical Engineering, Microelectronics +16

A new asymmetrical halo source GOLD drain (HS-GOLD) deep sub-half-micrometer n-MOSFET design for reliability and performance

T. N. Buti, S. Ogura, N. Rovedo et al. · IEEE Transactions on Electron Devices · 1991 · 59 citations

Engineering, Electrical Engineering, Microelectronics +16

A half micron MOSFET using double implanted LDD

S. Ogura, C.F. Codella, N. Rovedo et al. · 1982 · 57 citations

Engineering, Electrical Engineering, Electronic Materials +12