A half micron MOSFET using double implanted LDD - Concepedia

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A half micron MOSFET using double implanted LDD

57

Citations

0

References

1982

Year

S. Ogura, C.F. Codella, N. Rovedo, J. Shepard, J. Riseman

Unknown Venue

Low-power ElectronicsN RegionsElectrical EngineeringEngineeringMicrofabricationNanoelectronicsHalf Micron MosfetSelf-aligned P PocketsDouble-implanted LddBiomedical EngineeringMicroelectronics

Abstract

Double-implanted LDD, which consists of self-aligned p pockets below the n regions in LDD, is introduced to improve both breakdown and short channel effects. Its fabrication and experimental results are presented. The device optimized for a 0.5µm channel and 3.5V supply is discussed.