Concepedia

M. Hane

MH

Statistics

Publications

3

Citations

307

H-Index

3

Active since

1996

Affiliations

Toshiba (United States)(Current)

IBM Research - Thomas J. Watson Research Center

M. Hane is an author at Toshiba (United States) specializing in semiconductor devices, electrical engineering, and microelectronics.

Publications per year

1996–2010

3

Publications

3

Notching as an example of charging in uniform high density plasmas

Takashi Kinoshita, M. Hane, J.P. McVittie · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 167 citations

, , +17

Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

Qijiong Liu, A. Yagishita, N. Loubet et al. · 2010 · 80 citations

, , +10

A 0.063 µm<sup>2</sup> FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

V. Basker, T. Standaert, Hikaru Kawasaki et al. · 2010 · 60 citations

, , +11

1–3 of 3