Concepedia

M. Hane

MH

3

Publications

304

Citations

3

H-Index

1996

Active since

Affiliations

Toshiba (United States)(Current)

IBM Research - Thomas J. Watson Research Center

M. Hane is an author at Toshiba (United States) specializing in engineering, applied physics, and electrical engineering.

Top concepts

EngineeringApplied PhysicsMicroelectronicsElectrical EngineeringPhysicsMicrofabricationMicroscopyVlsi DesignAtomic PhysicsPlasma Physics

Publications per year

1996–2010

3

Publications

3

Notching as an example of charging in uniform high density plasmas

Takashi Kinoshita, M. Hane, J.P. McVittie · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 165 citations

Engineering, Plasma Science, High Density Plasma +16

Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

Qijiong Liu, A. Yagishita, N. Loubet et al. · 2010 · 79 citations

Low-power Electronics, Device Modeling, Electrical Engineering +15

A 0.063 &#x00B5;m<sup>2</sup> FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

V. Basker, T. Standaert, Hikaru Kawasaki et al. · 2010 · 60 citations

Novel Integration Scheme, Engineering, Vlsi Design +21

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