J. Lolivier

Multiple gate devices: advantages and challenges

T. Poiroux, M. Vinet, O. Faynot et al. · Microelectronic Engineering · 2005 · 131 citations

Engineering, Computer Engineering, Electrical Engineering +12

Bonded planar double-metal-gate NMOS transistors down to 10 nm

M. Vinet, T. Poiroux, J. Widiez et al. · IEEE Electron Device Letters · 2005 · 129 citations

Engineering, Electrical Engineering, Materials Science +17

Experimental Evaluation of Gate Architecture Influence on DG SOI MOSFETs Performance

J. Widiez, J. Lolivier, M. Vinet et al. · IEEE Transactions on Electron Devices · 2005 · 80 citations

Engineering, Electrical Engineering, Electronic Materials +16

Multigate silicon MOSFETs for 45nm node and beyond

T. Poiroux, M. Vinet, O. Faynot et al. · Solid-State Electronics · 2005 · 34 citations

Engineering, Computer Engineering, Electrical Engineering +12

Experimental comparison between double gate, ground plane, and single gate SOI CMOSFETs

J. Lolivier, J. Widiez, A. Vinet et al. · 2004 · 16 citations

Engineering, Electrical Engineering, Electronic Materials +13