Elke Erben

22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

R. Carter, J. Mazurier, Luca Pirro et al. · 2016 · 283 citations · Full text

Engineering, Vlsi Design, Radio Frequency +16

Challenges for the DRAM cell scaling to 40nm

Wolfgang Mueller, G. Aichmayr, W. Bergner et al. · 2006 · 87 citations

Electrical Engineering, Memory Architecture, Engineering +11

Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−)Al O2 films

Wenke Weinreich, R. Reiche, M. Lemberger et al. · Microelectronic Engineering · 2009 · 63 citations

Materials Science, C–v Polarity Asymmetry, Material Analysis +9

Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping

Wenke Weinreich, L. Wilde, Johannes Müller et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2012 · 55 citations

Engineering, Annealed Zro2, Chemical Deposition +19

6F<sup>2</sup> buried wordline DRAM cell for 40nm and beyond

T. Schloesser, Frank Jakubowski, Johannes von Kluge et al. · 2008 · 46 citations

Electrical Engineering, Memory Architecture, Engineering +11