P. Launay

A mass spectrometric diagnostic of C2F6 and CHF 3 plasmas during etching of SiO2 and Si

G. Turban, B. Grolleau, P. Launay et al. · Revue de Physique Appliquée · 1985 · 39 citations · Full text

Engineering, Atomic Emission Spectroscopy, Chemistry +20

Be diffusion mechanisms in InGaAs during post-growth annealing

S. Koumetz, J. Marcon, K. Ketata et al. · Applied Physics Letters · 1995 · 24 citations

Materials Engineering, Materials Science, Semiconductors +15

Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors

D. Caffin, A.M. Duchenois, F. Héliot et al. · IEEE Transactions on Electron Devices · 1997 · 23 citations

Materials Engineering, Materials Science, Electrical Engineering +13

STRAIN AND ULTIMATE STRENGTH OF CONCRETE UNDER TRIAXIAL STRESS.

P. Launay, H Gachon · NCSU Libraries Repository (North Carolina State University Libraries) · 1971 · 22 citations · Full text

Engineering, Civil Engineering, Concrete Technology +2

Passivation of InP-based HBTs for high bit rate circuit applications

D. Caffin, L. Bricard, J.L. Courant et al. · 2002 · 16 citations

Wide-bandgap Semiconductor, Engineering, Silicon Oxide +16