E. De Backer

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Moens, C. Liu, Abhishek Banerjee et al. · 2014 · 106 citations

Dynamic Ron, Electrical Engineering, Engineering +12

A Recurrent De Novo PACS2 Heterozygous Missense Variant Causes Neonatal-Onset Developmental Epileptic Encephalopathy, Facial Dysmorphism, and Cerebellar Dysgenesis

Heather E. Olson, Nolwenn Jean‐Marçais, Edward Yang et al. · The American Journal of Human Genetics · 2018 · 76 citations · Full text

Developmental Anomaly, Facial Dysmorphism, Developmental Biology +9

Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab

H.A.C. Tilmans, H. Ziad, Henri Jansen et al. · 2002 · 74 citations

Advanced Packaging, Electrical Engineering, Chip-scale Package +13

Impact of Ti/Al atomic ratio on the formation mechanism of non-recessed Au-free Ohmic contacts on AlGaN/GaN heterostructures

A. Constant, J. Baele, P. Coppens et al. · Journal of Applied Physics · 2016 · 37 citations

Materials Science, Aluminium Nitride, Ti/al Atomic Ratio +14

I3T80: a 0.35 μm based system-on-chip technology for 42 V battery automotive applications

P. Moens, D. Bolognesi, L. Delobel et al. · 2003 · 35 citations

Low-power Electronics, Electrical Engineering, Engineering +12