F. Chafik

High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

Qianlong Liu, M. Vinet, J. Gimbert et al. · 2013 · 96 citations

Engineering, Computer Engineering, Electrical Engineering +10

Tungsten and cobalt metallization: A material study for MOL local interconnects

V. Kamineni, M. Raymond, S. Siddiqui et al. · 2016 · 65 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ti and NiPt/Ti liner silicide contacts for advanced technologies

Praneet Adusumilli, Emre Alptekin, M. Raymond et al. · 2016 · 31 citations

Engineering, Electrical Engineering, Materials Science +14

UTBB FDSOI scaling enablers for the 10nm node

L. Grenouillet, Qinrang Liu, R. Wacquez et al. · 2013 · 29 citations

Engineering, Computer Engineering, Electrical Engineering +17

FDSOI CMOS devices featuring dual strained channel and thin BOX extendable to the 10nm node

Q. Liu, B. DeSalvo, P. Morin et al. · 2014 · 29 citations

Engineering, Computer Engineering, Electrical Engineering +12