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Ti and NiPt/Ti liner silicide contacts for advanced technologies
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2016
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Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringNanoelectronicsAdvanced TechnologiesSurface ScienceApplied PhysicsSiliceneSurface EngineeringSige EpitaxySemiconductor Device FabricationElectronic PackagingSilicon On InsulatorMicroelectronicsP-fet Contact ResistancesFinfet DevicesSemiconductor Device
We discuss the transition to Ti based silicides for source-drain (SD) contacts for 3D FinFET devices starting from the 14nm node & beyond. Reductions in n-FET & p-FET contact resistances are reported with the optimization of metallization process & dopant concentrations. The optimization of SiGe epitaxy and addition of a thin interfacial NiPt(10%) are found to significantly improve p-FET contact performance.