S. M. Polvino

High performance 14nm SOI FinFET CMOS technology with 0.0174µm ² embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 129 citations

Engineering, Computer Engineering, Electrical Engineering +9

Synchrotron microbeam x-ray radiation damage in semiconductor layers

S. M. Polvino, Conal E. Murray, Özgür Kalenci et al. · Applied Physics Letters · 2008 · 46 citations

Engineering, Materials Engineering, Materials Science +17

Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions

Conal E. Murray, Zhongqiao Ren, Andrew Ying et al. · Applied Physics Letters · 2009 · 37 citations

Engineering, Electrical Engineering, Materials Science +17

Nanoscale silicon-on-insulator deformation induced by stressed liner structures

Conal E. Murray, Andrew Ying, S. M. Polvino et al. · Journal of Applied Physics · 2011 · 26 citations

Natural Sciences, Materials Engineering, Materials Science +17

Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures

Conal E. Murray, K. L. Saenger, Özgür Kalenci et al. · Journal of Applied Physics · 2008 · 23 citations

Engineering, Materials Engineering, Materials Science +17