Applied Physics Letters · 2008 · 46 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsRadiation PhysicsSemiconductor DevicesRadiation Damage In MaterialsSemiconductor DefectsSilicon MaterialsX-ray CrystallographyX-ray DiffractionX-ray OpticsDamage AccumulationIrradiation DamageRadiation Damage EffectsRadiation Damage MechanismsRadiation EffectsRadiation Microbeam StudiesSynchrotron X-ray DiffractionX-ray Diffraction Analysis
Radiation induced structural damage is observed in silicon-on-insulator (SOI) and SiGe on SOI samples illuminated with monochromatic (11.2keV) x-ray microbeams approximately 250nm in diameter. The x-ray diffraction peaks from the irradiated layers irreversibly degrade with time, indicating permanent structural damage to the crystal lattice. The size of the damaged regions is almost an order of magnitude larger than the beam size. The magnitude of damage decreases as one moves away from the center of the illuminated volume. We discuss the threshold dosage required for damage initiation and possible mechanisms for the observed damage.
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Defect formation in solids by decay of electronic excitations
M.I. Klinger, Ch. Lushchik, T.V. Mashovets et al. · Uspekhi Fizicheskih Nauk · 1985 · 45 citations · Full text