Francesco Maria Puglisi

Recommended Methods to Study Resistive Switching Devices

Mario Lanza, H.‐S. Philip Wong, Eric Pop et al. · Advanced Electronic Materials · 2018 · 632 citations · Full text

Engineering, Power Electronics, Phase Change Memory +18

Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

Chengbin Pan, Yanfeng Ji, Na Xiao et al. · Advanced Functional Materials · 2017 · 307 citations · Full text

Engineering, Threshold Rs, Two-dimensional Materials +17

Advanced Data Encryption using 2D Materials

Chao Wen, Xuehua Li, Tommaso Zanotti et al. · Advanced Materials · 2021 · 118 citations · Full text

A Complete Statistical Investigation of RTN in HfO<sub>2</sub>-Based RRAM in High Resistive State

Francesco Maria Puglisi, Luca Larcher, Andrea Padovani et al. · IEEE Transactions on Electron Devices · 2015 · 115 citations · Full text

Electrical Engineering, Engineering, Physics +15

An Empirical Model for RRAM Resistance in Low- and High-Resistance States

Francesco Maria Puglisi, Luca Larcher, G. Bersuker et al. · IEEE Electron Device Letters · 2013 · 90 citations · Full text

Describes Filament Resistance, Electrical Engineering, High-resistance States +13