A Complete Statistical Investigation of RTN in HfO<sub>2</sub>-Based RRAM in High Resistive State

Abstract

In this paper, we investigate the random telegraph noise (RTN) in hafnium-oxide resistive random access memories in high resistive state (HRS). The current fluctuations are analyzed by decomposing the multilevel RTN signal into two-level RTN traces using a factorial hidden Markov model approach, which allows extracting the properties of the traps originating the RTN. The current fluctuations, statistically analyzed on devices with a different stack reset at different voltages, are attributed to the activation and deactivation of defects in the oxidized tip of the conductive filament, assisting the trap-assisted tunneling transport in HRS. The physical mechanisms responsible for the defect activation are discussed. We find that RTN current fluctuations can be due to either the coulomb interaction between oxygen vacancies (normally assisting the charge transport) and the electron charge trapped at interstitial oxygen defects, or the metastable defect configuration of oxygen vacancies assisting the electron transport in HRS. A consistent microscopic description of the phenomenon is proposed, linking the material properties to the device performance.