Fred Towler

An SRAM Design in 65-nm Technology Node Featuring Read and Write-Assist Circuits to Expand Operating Voltage

Harold Pilo, Charlie Barwin, G. Braceras et al. · IEEE Journal of Solid-State Circuits · 2007 · 136 citations

Engineering, Vlsi Design, Computer Architecture +16

An SRAM Design in 65nm and 45nm Technology Nodes Featuring Read and Write-Assist Circuits to Expand Operating Voltage

Harold Pilo, J.C. Barwin, G. Braceras et al. · 2006 · 112 citations

Low-power Electronics, Low-power Cmos Technology, Electrical Engineering +12

A 128k 6.5 ns access/5 ns cycle CMOS ECL static RAM

Fred Towler, J. L. Chu, R. Houghton et al. · 2003 · 22 citations

Hardware Security, Electrical Engineering, Experimental 128K +11

'System on a chip' technology platform for 0.18 μm digital, mixed signal and eDRAM applications

R. Mahnkopf, K.-H. Allers, M. Armacost et al. · 2003 · 13 citations

Engineering, Vlsi Design, Analog Design +18

A 300 MHz, 3.3 V 1 Mb SRAM fabricated in a 0.5 μm CMOS process

Harold Pilo, S. Lamphier, Fred Towler et al. · 2002 · 12 citations

μM Cmos Process, Electrical Engineering, Engineering +11