Concepedia

Tokuhisa Ohiwa

TO

12

Publications

253

Citations

10

H-Index

1992

Active since

Affiliations

Toshiba (Japan)(Current)

IBM (United States)

Nagoya University

Tokuhisa Ohiwa is an author at Toshiba (Japan) specializing in engineering, applied physics, and surface science.

Top concepts

EngineeringApplied PhysicsSurface ScienceMaterial ScienceMicroelectronicsMicrofabricationNanoelectronicsChemical EngineeringElectrical EngineeringMaterials Engineering

Publications per year

1992–2011

12

Publications

12

SiO<sub>2</sub> Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas

Tokuhisa Ohiwa, Keiji Horioka, T. Arikado et al. · Japanese Journal of Applied Physics · 1992 · 40 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Chemical bond modification in porous SiOCH films by H2 and H2/N2 plasmas investigated by <i>in situ</i> infrared reflection absorption spectroscopy

Hiroshi Yamamoto, Kohei Asano, Kenji Ishikawa et al. · Journal of Applied Physics · 2011 · 35 citations

Engineering, Nanoporous Material, Vacuum Device +19

H2/N2 plasma damage on porous dielectric SiOCH film evaluated by <i>in situ</i> film characterization and plasma diagnostics

Hiroshi Yamamoto, Keigo Takeda, Kenji Ishikawa et al. · Journal of Applied Physics · 2011 · 32 citations

Materials Science, H2/n2 Plasma Damage, Chemical Engineering +15

Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching

Tokuhisa Ohiwa, Akihiro Kojima, Makoto Sekine et al. · Japanese Journal of Applied Physics · 1998 · 29 citations

Materials Engineering, Materials Science, Chemical Engineering +12

A fully planarized 0.25 μm CMOS technology for 256 Mbit DRAM and beyond

G. Bronner, H. Aochi, M. Gall et al. · 2002 · 25 citations

Engineering, Vlsi Design, Emerging Memory Technology +16

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