I. Shlyakhov

Ovonic Threshold‐Switching Ge_<i>x</i>Se_<i>y</i> Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles

Sergiu Clima, Daniele Garbin, Karl Opsomer et al. · physica status solidi (RRL) - Rapid Research Letters · 2020 · 75 citations · Full text

Engineering, Solid-state Chemistry, Electronic Structure +21

Material-Selective Doping of 2D TMDC through Al<i>_x</i>O<i>_y</i> Encapsulation

Alessandra Leonhardt, Daniele Chiappe, Valeri Afanas’ev et al. · ACS Applied Materials & Interfaces · 2019 · 63 citations

Materials Engineering, Materials Science, Ii-vi Semiconductor +14

A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${I}$ &lt;/tex-math&gt; &lt;/inline-formula&gt;–&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${V}$ &lt;/tex-math&gt; &lt;/inline-formula&gt;, &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${C}$ &lt;/tex-math&gt; &lt;/inline-formula&gt;–&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${V}$ &lt;/tex-math&gt; &lt;/inline-formula&gt;, and &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${G}$ &lt;/tex-math&gt; &lt;/inline-formula&gt;–&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${V}$ &lt;/tex-math&gt; &lt;/inline-formula&gt; Measurements

Andrea Padovani, B. Kaczer, Milan Pešić et al. · IEEE Transactions on Electron Devices · 2019 · 43 citations · Full text

Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission

I. Shlyakhov, Joey Chai, Ming Yang et al. · APL Materials · 2017 · 20 citations · Full text

Engineering, Chemistry, Semiconductor Nanostructures +18

Atomistic investigation of the electronic structure, thermal properties and conduction defects in Ge-rich Ge&lt;inf&gt;x&lt;/inf&gt;Se&lt;inf&gt;1−x&lt;/inf&gt; materials for selector applications

Sergiu Clima, B. Govoreanu, Karl Opsomer et al. · 2017 · 19 citations

Ge-rich Ge, Mobility Gap Defects, Engineering +17