Statistics
Publications
5
Citations
155
H-Index
5
Active since
1974
Affiliations
Fujitsu (Japan)(Current)
T. Furuya is an author at Fujitsu (Japan) specializing in ion implantation, engineering, and electronic materials.
Publications per year
1974–1983
5
5
Migration of Mo atoms across Mo–Si interface induced by Ar+ ion bombardment
H. Nishi, T. Sakurai, T. Akamatsu et al. · Applied Physics Letters · 1974 · 32 citations
Channeled-ion implantation of group-III and group-V ions into silicon
T. Furuya, H. Nishi, Tsuguo Inada et al. · Journal of Applied Physics · 1978 · 29 citations
Uniform doping of channeled-ion implantation
H. Nishi, Tsuguo Inada, T. Sakurai et al. · Journal of Applied Physics · 1978 · 26 citations
Engineering, Electrical Engineering, Electronic Materials +8
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