Migration of Mo atoms across Mo–Si interface induced by Ar+ ion bombardment

Abstract

Backscattering analysis is used to investigate the effect of 150-keV Ar ion bombardment on Mo thin films evaporated on silicon. Ar ion bombardment induces the migration of Mo atoms into the underlying substrate. These migration phenomena are caused mainly by an atomic recoil process, and depend on implanted ion dose and on film thickness. These phenomena are also affected by the peculiarity of the Mo–Si interface. The migration of Mo atoms occurs most noticeably at a thickness of 450±50 Å, where about five Mo atoms for every incident Ar ion are introduced.