J. Demarest

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 144 citations

Engineering, Electrical Engineering, Materials Science +15

FINFET technology featuring high mobility SiGe channel for 10nm and beyond

Dechao Guo, G. Karve, Gen Tsutsui et al. · 2016 · 65 citations

Engineering, Computer Engineering, Electrical Engineering +14

A 0.063 µm<sup>2</sup> FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

V. Basker, T. Standaert, Hikaru Kawasaki et al. · 2010 · 60 citations

Engineering, Computer Engineering, Electrical Engineering +11

Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices

H. Jagannathan, Brett D. Anderson, C-W. Sohn et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 60 citations

Engineering, Computer Engineering, Electrical Engineering +16

Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology

Hiroaki Niimi, Zuoguang Liu, Oleg Gluschenkov et al. · IEEE Electron Device Letters · 2016 · 58 citations

Engineering, Electrical Engineering, Materials Science +15