R. Venegas

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Jie Hu, Steve Stoffels, Silvia Lenci et al. · IEEE Transactions on Electron Devices · 2016 · 83 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

M. Van Hove, Xuanwu Kang, Steve Stoffels et al. · IEEE Transactions on Electron Devices · 2013 · 68 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation of PECVD dielectrics for nondispersive metal-insulator-metal capacitors

Stefaan Van Huylenbroeck, Stefaan Decoutere, R. Venegas et al. · IEEE Electron Device Letters · 2002 · 50 citations

Natural Sciences, Electrical Engineering, Materials Science +16

The physical mechanism of dispersion caused by AlGaN/GaN buffers on Si and optimization for low dispersion

Steve Stoffels, Ming Zhao, R. Venegas et al. · 2015 · 50 citations

Engineering, Electrical Engineering, Materials Science +16

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Jie Hu, Steve Stoffels, Silvia Lenci et al. · Applied Physics Letters · 2015 · 38 citations · Full text

Engineering, Electrical Engineering, Materials Science +17