Future of plasma etching for microelectronics: Challenges and opportunities

G. S. Oehrlein, Stephan M. Brandstadter, Robert L. Bruce, +32

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Materials ScienceElectrical EngineeringDigital TwinsEngineeringPlasma Electronics +12

Prediction of Fluctuations in Plasma–Wall Interactions Using an Equipment Engineering System

Masanaga Fukasawa, Atsushi Kawashima, Nobuyuki Kuboi, +6

Japanese Journal of Applied Physics

Excess DepositionEngineeringEtch RatePlasma SimulationApplied Physics +11

Influence of hydrogen in silicon nitride films on the surface reactions during hydrofluorocarbon plasma etching

Nobuyuki Kuboi, Tetsuya Tatsumi, Hideki Minari, +4

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

EngineeringSilicon On InsulatorPlasma ProcessingChemical Reaction ProbabilitiesChemical Engineering +14

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation

Taku Iwase, Yoshito Kamaji, Song Kang, +17

Japanese Journal of Applied Physics

EngineeringElectron-beam LithographyPattern TransferDry ProcessesBeam Lithography +19

Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

Nobuyuki Kuboi, Tetsuya Tatsumi, Takashi Kinoshita, +4

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

EngineeringSin FilmPlasma ProcessingChemical EngineeringPlasma-induced Damage Distribution +16

Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO$_{2}$ over Si Substrate by Fluorocarbon Plasma

Nobuyuki Kuboi, Tetsuya Tatsumi, Shōji Kobayashi, +4

Applied Physics Express

Materials EngineeringMaterials ScienceFluorocarbon PlasmaPlasma-induced Damage DistributionEngineering +13

Numerical Simulation Method for Plasma-Induced Damage Profile in SiO₂ Etching

Nobuyuki Kuboi, Tetsuya Tatsumi, Shōji Kobayashi, +4

Japanese Journal of Applied Physics

Materials ScienceFluorocarbon PlasmaDamage MechanismEngineeringPlasma Simulation +12

Advanced simulation technology for etching process design for CMOS device applications

Nobuyuki Kuboi, Masanaga Fukasawa, Tetsuya Tatsumi

Japanese Journal of Applied Physics

EngineeringVlsi DesignPlasma ProcessingPhysical Design (Electronics)Wafer Scale Processing +15

Insights into different etching properties of continuous wave and atomic layer etching processes for SiO2 and Si3N4 films using voxel-slab model

Nobuyuki Kuboi, Tetsuya Tatsumi, Jun Komachi, +1

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

EngineeringSilicon On InsulatorAtomic LayerChemical EngineeringNanoelectronics +16

Effect of open area ratio and pattern structure on fluctuations in critical dimension and Si recess

Nobuyuki Kuboi, Tetsuya Tatsumi, Masanaga Fukasawa, +4

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

EngineeringOpen Area RatioIntegrated CircuitsSilicon On InsulatorDefect Tolerance +18