Pranav Kalavade

Flash EEPROM Threshold Instabilities due to Charge Trapping During Program/Erase Cycling

Neal Mielke, Hanmant Belgal, I. Kalastirsky et al. · IEEE Transactions on Device and Materials Reliability · 2004 · 170 citations

Engineering, Computer Engineering, Electrical Engineering +17

30.2 A 1Tb 4b/Cell 144-Tier Floating-Gate 3D-NAND Flash Memory with 40MB/s Program Throughput and 13.8Gb/mm² Bit Density

A. Khakifirooz, Sriram Balasubrahmanyam, R. Fastow et al. · 2021 · 37 citations

Engineering, Computer Engineering, Electrical Engineering +15

Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing

G. D. Wilk, M.L. Green, M.-Y. Ho et al. · 2003 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +17

4 bits/cell 96 Layer Floating Gate 3D NAND with CMOS under Array Technology and SSDs

Pranav Kalavade · 2020 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +15

A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-nand Technology and Featuring a 23.3 Gb/mm ² Bit Density

A. Khakifirooz, Eduardo Anaya, Sriram Balasubrahmanyam et al. · IEEE Solid-State Circuits Letters · 2023 · 21 citations

Engineering, Computer Engineering, Electrical Engineering +14