X. Li

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

N. Killat, James W. Pomeroy, T. Paskova et al. · IEEE Electron Device Letters · 2012 · 67 citations

Engineering, Electrical Engineering, Materials Science +17

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Jacob H. Leach, Congyong Zhu, M. Wu et al. · Applied Physics Letters · 2009 · 44 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of active layer design on InGaN radiative recombination coefficient and LED performance

X. Li, Serdal Okur, Fan Zhang et al. · Journal of Applied Physics · 2012 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency

X. Ni, X. Li, J. Lee et al. · Superlattices and Microstructures · 2010 · 32 citations

Engineering, Electrical Engineering, Materials Science +16

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Jacob H. Leach, Congyong Zhu, M. Wu et al. · Applied Physics Letters · 2010 · 29 citations

Engineering, Electrical Engineering, Materials Science +17