Rana ElKashlan

GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL

Bertrand Parvais, A. Alian, Uthayasankaran Peralagu et al. · 2020 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions

Hao Yu, Bertrand Parvais, Uthayasankaran Peralagu et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 20 citations

Engineering, Electrical Engineering, Physics +17

Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28 GHz

Rana ElKashlan, Sachin Yadav, Ahmad Khaled et al. · 2024 · 13 citations

Engineering, Electrical Engineering, Materials Science +17

From 5G to 6G: will compound semiconductors make the difference?

Nadine Collaert, A. Alian, A. Banerjee et al. · 2020 · 11 citations

Engineering, Electrical Engineering, Microelectronics +16

mm-Wave GaN-on-Si HEMTs with a P_SAT of 3.9W/mm at 28GHz

Rana ElKashlan, Ahmad Khaled, Sachin Yadav et al. · 2023 · 11 citations

Engineering, Electrical Engineering, Materials Science +17