Ahmad Khaled

GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL

Bertrand Parvais, A. Alian, Uthayasankaran Peralagu et al. · 2020 · 24 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Substrate RF Losses and Non-linearities in GaN-on-Si HEMT Technology

Sachin Yadav, Pieter Cardinael, Ming Zhao et al. · 2020 · 21 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Substrate Rf Losses +10

Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions

Hao Yu, Bertrand Parvais, Uthayasankaran Peralagu et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 19 citations

III-V/III-N technologies for next generation high-capacity wireless communication

Nadine Collaert, A. Alian, A. Banerjee et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 14 citations

Investigating stress measurement capabilities of GHz Scanning Acoustic Microscopy for 3D failure analysis

Ahmad Khaled, Sebastian Brand, Michael Kögel et al. · Microelectronics Reliability · 2016 · 12 citations

Stress Wave, Engineering, Microscopy +10