Emmanuel Nolot

A novel 2-step ALD route to ultra-thin MoS₂films on SiO₂through a surface organometallic intermediate

Stéphane Cadot, O. Renault, Mathieu Frégnaux et al. · Nanoscale · 2016 · 79 citations

Germanium, antimony, tellurium, their binary and ternary alloys and the impact of nitrogen: An X-ray photoelectron study

Emmanuel Nolot, C. Sabbione, Walter Batista Pessoa et al. · Applied Surface Science · 2020 · 72 citations · Full text

Materials Engineering, Materials Science, Ternary Alloys +6

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

H. Rotella, Yann Mazel, Stéphane Brochen et al. · Journal of Physics D Applied Physics · 2017 · 69 citations

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Stefan Petzold, Eszter Piros, Robert Eilhardt et al. · Advanced Electronic Materials · 2020 · 35 citations · Full text

Semiconductors, Multi‐level Quantization, Electrical Engineering +15

Reference-free grazing incidence x-ray fluorescence and reflectometry as a methodology for independent validation of x-ray reflectometry on ultrathin layer stacks and a depth-dependent characterization

Philipp Hönicke, Blanka Detlefs, Emmanuel Nolot et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2019 · 34 citations · Full text

Engineering, Microscopy, Polycapillary Optics +22