Kailun Zhong

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs

Jin Wei, Ruiliang Xie, Han Xu et al. · IEEE Electron Device Letters · 2019 · 171 citations

Device Modeling, -Gan Gate Hemts, Electrical Engineering +13

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs

Jiabei He, Jin Wei, Song Yang et al. · IEEE Transactions on Electron Devices · 2019 · 123 citations

Semiconductors, -Gan Gate Hemts, Electrical Engineering +12

Isosteviol Sodium Protects against Ischemic Stroke by Modulating Microglia/Macrophage Polarization via Disruption of GAS5/miR-146a-5p sponge

Hao Zhang, Minyi Lu, Xiaofeng Zhang et al. · Scientific Reports · 2019 · 69 citations · Full text

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current

Qingkai Qian, Jiacheng Lei, Jin Wei et al. · npj 2D Materials and Applications · 2019 · 48 citations · Full text

Wide-bandgap Semiconductor, Engineering, Field-effect Transistors +16

<i>I</i> _G- and <i>V</i> _GS-Dependent Dynamic <i>R</i> _ON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs

Kailun Zhong, Jin Wei, Jiabei He et al. · IEEE Transactions on Industrial Electronics · 2021 · 40 citations

Dynamic On-resistance, Wide-bandgap Semiconductor, Electrical Engineering +9