D. S. McPhail

The lattice locations of silicon atoms in delta-doped layers in GaAs

M. J. Ashwin, M. Fahy, J. J. Harris et al. · Journal of Applied Physics · 1993 · 63 citations

Engineering, Optoelectronic Devices, Integrated Circuits +20

P-type delta doping in silicon MBE

N. L. Mattey, M. Hopkinson, R. Houghton et al. · Thin Solid Films · 1990 · 31 citations

Electrical Engineering, Engineering, Nanoelectronics +5

A solution to boron contamination at the substrate/epilayer interface of silicon grown by molecular beam epitaxy

R. A. A. Kubiak, Wai Yie Leong, Mark Dowsett et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1986 · 29 citations

Materials Science, Semiconductors, Engineering +11

Profile distortions during secondary ion mass spectrometry analyses of resistive layers due to electron stimulated desorption and charging

D. S. McPhail, M. G. Dowsett, E. H. C. Parker · Journal of Applied Physics · 1986 · 16 citations

Engineering, Fluorine Profiles, Stimulated Desorption +24

Diffusion and Activation During Rapid Thermal Annealing of Implanted Boron in Silicon

N. E. B. Cowern, D. J. Godfrey, D. G. Hasko et al. · MRS Proceedings · 1985 · 14 citations

Materials Science, Implanted Boron, Boron Nitride +8