N. L. Mattey

Degradation of thermal interface materials for high-temperature power electronics applications

Robert Skuriat, Jianfeng Li, Pearl Agyakwa et al. · Microelectronics Reliability · 2013 · 66 citations · Full text

Engineering, Cu Stack Sample, Cu Stack Samples +19

<i>p</i>-type delta-doped layers in silicon: Structural and electronic properties

N. L. Mattey, Mark Dowsett, E. H. C. Parker et al. · Applied Physics Letters · 1990 · 37 citations

Semiconductors, P-type Delta-doped Layers, Semiconductor Technology +12

Effective mass and quantum lifetime in a Si/Si0.87Ge0.13/Si two-dimensional hole gas

T. E. Whall, N. L. Mattey, Andrew Plews et al. · Applied Physics Letters · 1994 · 35 citations

Semiconductors, Semiconductor Technology, Engineering +13

P-type delta doping in silicon MBE

N. L. Mattey, M. Hopkinson, R. Houghton et al. · Thin Solid Films · 1990 · 31 citations

Electrical Engineering, Engineering, Nanoelectronics +5

Effective mass and band nonparabolicity in remote doped Si/Si0.8Ge0.2 quantum wells

T. E. Whall, Andrew Plews, N. L. Mattey et al. · Applied Physics Letters · 1995 · 24 citations · Full text

Semiconductors, Effective Masses, Semiconductor Technology +14