R. Houghton

P-type delta doping in silicon MBE

N. L. Mattey, M. Hopkinson, R. Houghton et al. · Thin Solid Films · 1990 · 31 citations

Electrical Engineering, Engineering, Nanoelectronics +5

A solution to boron contamination at the substrate/epilayer interface of silicon grown by molecular beam epitaxy

R. A. A. Kubiak, Wai Yie Leong, Mark Dowsett et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1986 · 29 citations

Materials Science, Semiconductors, Engineering +11

The electrical properties of doped silicon, grown by Molecular-Beam-Epitaxy (MBE)

R. A. A. Kubiak, S. M. Newstead, Wai Yie Leong et al. · Applied Physics A · 1987 · 22 citations

Materials Science, Doped Silicon, Electrical Engineering +7

A preliminary study of impurities and defects in Si-MBE layers

R. Houghton, Gnyaneshwari Patel, Wai Yie Leong et al. · Journal of Crystal Growth · 1987 · 14 citations

Engineering, Physics, Nanoelectronics +8

Quantifying the effects of uneven etching during the SIMS analysis of periodic doping structures grown by silicon MBE

D. S. McPhail, M. G. Dowsett, H. Fox et al. · Surface and Interface Analysis · 1988 · 11 citations

Engineering, Sims Analysis, Silicon On Insulator +18