H. Fox

Secondary ion mass spectrometry depth profiling of boron, antimony, and germanium deltas in silicon and implications for profile deconvolution

M. G. Dowsett, R. D. Barlow, H. Fox et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 37 citations

Engineering, Ion Beam Instrumentation, Chemistry +19

SIMS response functions for MBE grown delta layers in silicon

R. D. Barlow, Mark Dowsett, H. Fox et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1992 · 21 citations

Electrical Engineering, Engineering, Physics +8

Quantifying the effects of uneven etching during the SIMS analysis of periodic doping structures grown by silicon MBE

D. S. McPhail, M. G. Dowsett, H. Fox et al. · Surface and Interface Analysis · 1988 · 11 citations

Engineering, Sims Analysis, Silicon On Insulator +18