Kyle M. Bothe

Zinc oxide thin film transistors with Schottky source barriers

Michael Alex, Manisha Gupta, Fatema Rezwana Chowdhury et al. · Solid-State Electronics · 2012 · 64 citations

Electrical Engineering, Engineering, Oxide Electronics +3

Improved X-Band Performance and Reliability of a GaN HEMT With Sunken Source Connected Field Plate Design

Kyle M. Bothe, Satyaki Ganguly, Jia Guo et al. · IEEE Electron Device Letters · 2022 · 36 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemt +10

Electrical Comparison of ${\rm HfO}_{2}$ and ${\rm ZrO}_{2}$ Gate Dielectrics on GaN

Kyle M. Bothe, Peter A. von Hauff, Amir Afshar et al. · IEEE Transactions on Electron Devices · 2013 · 24 citations

Wide-bandgap Semiconductor, Engineering, Chemical Deposition +16

ZrO₂ on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition

Patrick von Hauff, Amir Afshar, A. Foroughi‐Abari et al. · Applied Physics Letters · 2013 · 15 citations

Oxide Heterostructures, Materials Science, Electrical Engineering +13

Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High-$\kappa$ Dielectrics

Kyle M. Bothe, Peter A. von Hauff, Amir Afshar et al. · IEEE Transactions on Electron Devices · 2012 · 13 citations

Engineering, Planar Moscap Devices, Capacitance Modeling +16