A. Foroughi‐Abari - Concepedia

Author

A. Foroughi‐Abari

University of Alberta

Also Known As

A. Foroughi-Abari, A. Foroughi‐Abari, Ali Foroughi-Abari

Publications

278

Citations

H-Index

Concepts

All Affiliations

University of Alberta

About

A. Foroughi‐Abari is an author at University of Alberta specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	258
2	Applied Physics	8	8	231
3	Natural Sciences	1	1	13
4	Chemical Engineering	1	1	13
5	Chemistry	1	1	13

A. Foroughi‐Abari

Publications

258

Citations

H-Index

Page 1

	Year	Citations
Enhanced rectifying response from metal-insulator-insulator-metal junctions P. Maraghechi, A. Foroughi‐Abari, Ken Cadien, Applied Physics Letters EngineeringSemiconductor DeviceExtraordinary NonlinearityTunneling MicroscopyNanoelectronics	2011	68
Growth, structure and properties of sputtered niobium oxide thin films A. Foroughi‐Abari, Ken Cadien Thin Solid Films Materials ScienceMaterials EngineeringEngineeringOxide ElectronicsSurface Science	2010	45
Observation of resonant tunneling phenomenon in metal-insulator-insulator-insulator-metal electron tunnel devices P. Maraghechi, A. Foroughi‐Abari, Ken Cadien, Applied Physics Letters Electrical EngineeringSemiconductor DeviceEngineeringTunneling MicroscopyPhysics	2012	36
Ultrathin-layer chromatography nanostructures modified by atomic layer deposition Steven R. Jim, A. Foroughi‐Abari, Kathleen M. Krause, Journal of Chromatography A Materials ScienceEngineeringUltrathin-layer Chromatography NanostructuresNanotechnologyNanomaterials	2013	27
Electrical Comparison of ${\rm HfO}_{2}$ and ${\rm ZrO}_{2}$ Gate Dielectrics on GaN Kyle M. Bothe, Peter A. von Hauff, Amir Afshar, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringChemical DepositionSemiconductor DeviceSemiconductors	2013	24
The effect of argon pressure, residual oxygen and exposure to air on the electrical and microstructural properties of sputtered chromium thin films A. Foroughi‐Abari, Can Xu, Ken Cadien Thin Solid Films Materials ScienceMicrostructural PropertiesElectrical EngineeringMaterial AnalysisEngineering	2011	17
ZrO<sub>2</sub> on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition Patrick von Hauff, Amir Afshar, A. Foroughi‐Abari, Applied Physics Letters Oxide HeterostructuresMaterials ScienceElectrical EngineeringSemiconductorsZro2 Oxide	2013	15
Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High-$\kappa$ Dielectrics Kyle M. Bothe, Peter A. von Hauff, Amir Afshar, IEEE Transactions on Electron Devices EngineeringPlanar Moscap DevicesCapacitance ModelingInterconnect (Integrated Circuits)Semiconductor Device	2012	13
In Situ Spectroscopic Ellipsometry Study of Plasma-Enhanced ALD of Al<sub>2</sub>O<sub>3</sub>on Chromium Substrates A. Foroughi‐Abari, Ken Cadien Journal of The Electrochemical Society Aluminium NitrideEngineeringChemistryChemical DepositionSpectroscopic Property	2011	13

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