A. Foroughi‐Abari

Enhanced rectifying response from metal-insulator-insulator-metal junctions

P. Maraghechi, A. Foroughi‐Abari, Ken Cadien et al. · Applied Physics Letters · 2011 · 68 citations

Engineering, Semiconductor Device, Extraordinary Nonlinearity +16

Growth, structure and properties of sputtered niobium oxide thin films

A. Foroughi‐Abari, Ken Cadien · Thin Solid Films · 2010 · 45 citations

Materials Science, Materials Engineering, Engineering +7

Observation of resonant tunneling phenomenon in metal-insulator-insulator-insulator-metal electron tunnel devices

P. Maraghechi, A. Foroughi‐Abari, Ken Cadien et al. · Applied Physics Letters · 2012 · 36 citations

Electrical Engineering, Semiconductor Device, Engineering +13

Ultrathin-layer chromatography nanostructures modified by atomic layer deposition

Steven R. Jim, A. Foroughi‐Abari, Kathleen M. Krause et al. · Journal of Chromatography A · 2013 · 27 citations

Materials Science, Engineering, Ultrathin-layer Chromatography Nanostructures +5

Electrical Comparison of ${\rm HfO}_{2}$ and ${\rm ZrO}_{2}$ Gate Dielectrics on GaN

Kyle M. Bothe, Peter A. von Hauff, Amir Afshar et al. · IEEE Transactions on Electron Devices · 2013 · 24 citations

Wide-bandgap Semiconductor, Engineering, Chemical Deposition +16