S.S. Park

Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

J.H. Oh, J.H. Park, Yong Lim et al. · 2006 · 138 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +19

Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

J. W. Johnson, A.P. Zhang, Wen-Ben Luo et al. · IEEE Transactions on Electron Devices · 2002 · 95 citations

Wide-bandgap Semiconductor, Recovery Characteristics, Electrical Engineering +15

Structural and optical properties of thick freestanding GaN templates

Jaime A. Freitas, G. C. B. Braga, W. J. Moore et al. · Journal of Crystal Growth · 2001 · 44 citations

Optical Materials, Engineering, Gan Templates +7

Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers

Kwang Hyeon Baik, Yoshihiro Irokawa, F. Ren et al. · Solid-State Electronics · 2003 · 43 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

Schottky rectifiers fabricated on free-standing GaN substrates

J. W. Johnson, J.R. LaRoch, F. Ren et al. · Solid-State Electronics · 2001 · 38 citations

Electrical Engineering, Engineering, Applied Physics +4