Wen-Ben Luo

Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

J. W. Johnson, A.P. Zhang, Wen-Ben Luo et al. · IEEE Transactions on Electron Devices · 2002 · 95 citations

Wide-bandgap Semiconductor, Recovery Characteristics, Electrical Engineering +15

A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier

Mingqi Chen, William Sutton, Ioulia Smorchkova et al. · IEEE Microwave and Wireless Components Letters · 2010 · 67 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers

Shih-En Shih, W.R. Deal, Daisuke Yamauchi et al. · IEEE Transactions on Microwave Theory and Techniques · 2009 · 54 citations

Wide-bandgap Semiconductor, Db Flat Gain, Electrical Engineering +9

Multi-decade GaN HEMT Cascode-distributed power amplifier with baseband performance

K.W. Kobayashi, Yaochung Chen, Ioulia Smorchkova et al. · 2009 · 51 citations

Wide-bandgap Semiconductor, T-gate Hemt Technology, Electrical Engineering +10

Reliable GaN HEMTS for high frequency applications

B. Heying, Wen-Ben Luo, Ioulia Smorchkova et al. · 2010 IEEE MTT-S International Microwave Symposium · 2010 · 21 citations

Wide-bandgap Semiconductor, Electrical Engineering, Reliable Gan Hemts +11