Solid-State Electronics · 2001 · 38 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesSemiconductor Device MaterialsSemiconductor SurfacesThin-film TransistorsWide-bandgap Semiconductor DevicesCurrent-source RectifiersDiode RectifiersGallium Nitride (Gan) MaterialsRectifying ContactsSchottky Barrier Diodes
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Fabrication and performance of GaN electronic devices
S. J. Pearton, F. Ren, A.P. Zhang et al. · Materials Science and Engineering R Reports · 2000 · 498 citations
GaN based transistors for high power applications
M. S. Shur · Solid-State Electronics · 1998 · 270 citations
S. J. Pearton, F. Ren · Advanced Materials · 2000 · 185 citations
High voltage (450 V) GaN Schottky rectifiers
Zvonimir Bandić, P. M. Bridger, E. C. Piquette et al. · Applied Physics Letters · 1999 · 153 citations