J.-I. Chyi

MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors

Yoshihiro Irokawa, Yoshitaka Nakano, M. Ishiko et al. · Applied Physics Letters · 2004 · 115 citations

Engineering, Electrical Engineering, Materials Engineering +17

Gd 2 O 3 / GaN metal-oxide-semiconductor field-effect transistor

J. W. Johnson, B. Luo, F. Ren et al. · Applied Physics Letters · 2000 · 98 citations

Engineering, Materials Engineering, Materials Science +17

AlGaN/GaN HEMT based liquid sensors

R. Mehandru, B. Luo, B. S. Kang et al. · Solid-State Electronics · 2003 · 74 citations

Engineering, Materials Engineering, Materials Science +10

Schottky rectifiers fabricated on free-standing GaN substrates

J. W. Johnson, J.R. LaRoch, F. Ren et al. · Solid-State Electronics · 2001 · 38 citations

Engineering, Electrical Engineering, Materials Science +14

High breakdown voltage Au/Pt/GaN Schottky diodes

G. Dang, A. P. Zhang, M. M. Mshewa et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2000 · 24 citations

Engineering, Electrical Engineering, Materials Science +16