Ken’etsu Yokogawa

Electron and hole traps in SiO/sub 2/ films thermally grown on Si substrates in ultra-dry oxygen

H. Miki, Munetaka Noguchi, Ken’etsu Yokogawa et al. · IEEE Transactions on Electron Devices · 1988 · 87 citations

Natural Sciences, Materials Science, Physics +17

Electron spin resonance observation of the creation, annihilation, and charge state of the 74-Gauss doublet in device oxides damaged by soft x rays

Tetsuya Takahashi, B. B. Triplett, Ken’etsu Yokogawa et al. · Applied Physics Letters · 1987 · 59 citations

Engineering, Materials Science, Electronic Materials +16

Atomic layer etching of silicon nitride using infrared annealing for short desorption time of ammonium fluorosilicate

Nobuya Miyoshi, Hiroyuki Kobayashi, Kazunori Shinoda et al. · Japanese Journal of Applied Physics · 2017 · 58 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Effects of Mask and Necking Deformation on Bowing and Twisting in High-Aspect-Ratio Contact Hole Etching

Masatoshi Miyake, Nobuyuki Negishi, Masaru Izawa et al. · Japanese Journal of Applied Physics · 2009 · 44 citations

Engineering, Manufacturing Engineering, Materials Science +14

Investigation of Bowing Reduction in SiO₂ Etching Taking into Account Radical Sticking in a Hole

Masaru Izawa, Nobuyuki Negishi, Ken’etsu Yokogawa et al. · Japanese Journal of Applied Physics · 2007 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +13