Ken’etsu Yokogawa

Electron and hole traps in SiO/sub 2/ films thermally grown on Si substrates in ultra-dry oxygen

H. Miki, Munetaka Noguchi, Ken’etsu Yokogawa et al. · IEEE Transactions on Electron Devices · 1988 · 87 citations

Materials Science, Semiconductors, Epitaxial Growth +14

Electron spin resonance observation of the creation, annihilation, and charge state of the 74-Gauss doublet in device oxides damaged by soft x rays

Tetsuya Takahashi, B. B. Triplett, Ken’etsu Yokogawa et al. · Applied Physics Letters · 1987 · 59 citations

Engineering, Magnetic Resonance, Defect Tolerance +17

Atomic layer etching of silicon nitride using infrared annealing for short desorption time of ammonium fluorosilicate

Nobuya Miyoshi, Hiroyuki Kobayashi, Kazunori Shinoda et al. · Japanese Journal of Applied Physics · 2017 · 55 citations · Full text

Engineering, Atomic Layer Etching, Optoelectronic Devices +19

Investigation of Bowing Reduction in SiO₂ Etching Taking into Account Radical Sticking in a Hole

Masaru Izawa, Nobuyuki Negishi, Ken’etsu Yokogawa et al. · Japanese Journal of Applied Physics · 2007 · 40 citations

Materials Science, High-aspect-ratio Contact Hole, Engineering +14

Effects of minute impurities (H, OH, F) on SiO/sub 2//Si interface as investigated by nuclear resonant reaction and electron spin resonance

Yuzuru Ohji, Yasushiro Nishioka, Ken’etsu Yokogawa et al. · IEEE Transactions on Electron Devices · 1990 · 40 citations

Materials Science, Electrical Engineering, Engineering +15