Nobuya Miyoshi

Atomic layer etching of silicon nitride using infrared annealing for short desorption time of ammonium fluorosilicate

Nobuya Miyoshi, Hiroyuki Kobayashi, Kazunori Shinoda et al. · Japanese Journal of Applied Physics · 2017 · 55 citations · Full text

Engineering, Atomic Layer Etching, Optoelectronic Devices +19

High-pressure phase transition and behavior of protons in brucite Mg(OH) 2 : a high-pressure-temperature study using IR synchrotron radiation

Keiji Shinoda, M. Yamakata, Tetsuya Nanba et al. · Physics and Chemistry of Minerals · 2002 · 43 citations

Materials Science, Ir Synchrotron Radiation, Mineral Physic +9

Growth of bulk GaN crystals by Na flux method

Yusuke Mori, Yasuo Kitaoka, Mamoru Imade et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 43 citations · Full text

Materials Science, Electrical Engineering, Engineering +9

Growth of GaN crystals by Na flux LPE method

Yusuke Mori, Yasuo Kitaoka, Mamoru Imade et al. · physica status solidi (a) · 2010 · 37 citations

Materials Science, Electrical Engineering, Engineering +8

Self-limiting reactions of ammonium salt in CHF3/O2 downstream plasma for thermal-cyclic atomic layer etching of silicon nitride

Kazunori Shinoda, Nobuya Miyoshi, Hiroyuki Kobayashi et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2019 · 31 citations

Engineering, Chemistry, Silicon On Insulator +17