S. C. Foo

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Z. H. Liu, Geok Ing Ng, S. Arulkumaran et al. · Applied Physics Letters · 2009 · 108 citations

Engineering, Electrical Engineering, Materials Science +17

Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

G. Ye, H. Wang, S. Arulkumaran et al. · Applied Physics Letters · 2013 · 82 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD

Geok Ing Ng, S. Arulkumaran, Y. K. T. Maung et al. · IEEE Electron Device Letters · 2009 · 77 citations

Engineering, Electrical Engineering, Materials Science +17

Improved Linearity for Low-Noise Applications in 0.25-$ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

Z. H. Liu, Geok Ing Ng, S. Arulkumaran et al. · IEEE Electron Device Letters · 2010 · 68 citations

Engineering, Electrical Engineering, Materials Science +17

Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation

Govindo J. Syaranamual, Wardhana Aji Sasangka, Riko I Made et al. · Microelectronics Reliability · 2016 · 34 citations

Engineering, Electrical Engineering, Materials Science +16