Y. K. T. Maung

Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation

Z. H. Liu, Geok Ing Ng, Hong Zhou et al. · Applied Physics Letters · 2011 · 123 citations

Engineering, Electrical Engineering, Materials Science +17

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Z. H. Liu, Geok Ing Ng, S. Arulkumaran et al. · Applied Physics Letters · 2009 · 108 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

Z. H. Liu, Geok Ing Ng, S. Arulkumaran et al. · Applied Physics Letters · 2011 · 85 citations

Engineering, Electrical Engineering, Materials Science +17

Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

G. Ye, H. Wang, S. Arulkumaran et al. · Applied Physics Letters · 2013 · 82 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD

Geok Ing Ng, S. Arulkumaran, Y. K. T. Maung et al. · IEEE Electron Device Letters · 2009 · 77 citations

Engineering, Electrical Engineering, Materials Science +17