T. Kormann

Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm² 6T-SRAM bitcell

C. Fenouillet-Béranger, J. Todeschini, Jean-Christophe Le-Denmat et al. · 2007 · 61 citations

Engineering, Computer Engineering, Electrical Engineering +15

Selective etching of Si1−xGex versus Si with gaseous HCl for the formation of advanced CMOS devices

N. Loubet, T. Kormann, G. Chabanne et al. · Thin Solid Films · 2008 · 29 citations

Engineering, Materials Engineering, Materials Science +17

Mechanical and Electrical Analysis of Strained Liner Effect in 35 nm Fully Depleted Silicon-on-Insulator Devices with Ultra Thin Silicon Channels

C. Gallon, C. Fenouillet-Béranger, S. Denorme et al. · Japanese Journal of Applied Physics · 2006 · 26 citations

Engineering, Electrical Engineering, Materials Science +17