J. W. Lee

Sputtered AlN encapsulant for high-temperature annealing of GaN

J.C. Zolper, D. J. Rieger, Albert G. Baca et al. · Applied Physics Letters · 1996 · 92 citations

Engineering, Electrical Engineering, Materials Science +17

Passivation of acceptors in InP resulting from CH4/H2 reactive ion etching

Todd R. Hayes, W. C. Dautremont–Smith, H. S. Luftman et al. · Applied Physics Letters · 1989 · 60 citations

Natural Sciences, Materials Engineering, Materials Science +17

Pt/Ti/<i>p</i>-In0.53Ga0.47As low-resistance nonalloyed ohmic contact formed by rapid thermal processing

A. Katz, W. C. Dautremont–Smith, S. N. G. Chu et al. · Applied Physics Letters · 1989 · 52 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Hydrogen passivation of Ca acceptors in GaN

J. W. Lee, S. J. Pearton, J.C. Zolper et al. · Applied Physics Letters · 1996 · 48 citations

Engineering, Materials Engineering, Materials Science +17

Comparison of H+ and He+ implant isolation of GaAs-based heterojunction bipolar transistors

S. J. Pearton, C. R. Abernathy, J. W. Lee et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 35 citations

Engineering, Electrical Engineering, Materials Science +17