D. J. Rieger

Inductively coupled plasma etching of GaN

R. J. Shul, G McClellan, S.A. Casalnuovo et al. · Applied Physics Letters · 1996 · 212 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12

High-density plasma etching of compound semiconductors

R. J. Shul, G McClellan, R. D. Briggs et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 121 citations

Semiconductors, Materials Science, Electrical Engineering +12

Sputtered AlN encapsulant for high-temperature annealing of GaN

J.C. Zolper, D. J. Rieger, Albert G. Baca et al. · Applied Physics Letters · 1996 · 91 citations

Materials Engineering, Semiconductors, Materials Science +13

Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system

X. A. Cao, C. R. Abernathy, R. K. Singh et al. · Applied Physics Letters · 1998 · 76 citations

Wide-bandgap Semiconductor, Sin Site Switching, Engineering +16

Implementation of a Transmon Qubit Using Superconducting Granular Aluminum

Patrick Winkel, Kiril Borisov, Lukas Grünhaupt et al. · Physical Review X · 2020 · 62 citations · Full text