E. Eld

SiGe HBT technology: device and application issues

D.L. Harame, L.E. Larson, M. Case et al. · 2002 · 48 citations

Electrical Engineering, Polysilicon Emitter, Engineering +11

A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

B. Orner, Q. Z. Liu, B.A. Rainey et al. · Bipolar/BiCMOS Circuits and Technology Meeting · 2003 · 36 citations

Electrical Engineering, Sige Hbt, Engineering +10

A high-performance sub-0.25 μm CMOS technology with multiple thresholds and copper interconnects

L.T. Su, R. Schulz, J. Adkisson et al. · 2002 · 26 citations

Low-power Electronics, Electrical Engineering, Engineering +15

ESD robustness of a BiCMOS SiGe technology

Steven H. Voldman, P. Juliano, N. Schmidt et al. · 2002 · 17 citations

Engineering, Vlsi Design, Electronic Design +16

High reliability metal insulator metal capacitors for silicon germanium analog applications

K. Stein, Jackson Kocis, G. Hueckel et al. · 2002 · 15 citations

Electrical Engineering, Engineering, Silicon Germanium +13